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AIzaSyAYiBZKx7MnpbEhh9jyipgxe19OcubqV5w
August 1, 2025
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1 gen 1971 anni - Nonvolatile memory

Descrizione:

The unique ability to encase the silicon gate in thermal oxide-one of the best electrical insulators known—allowed also the creation of the first commercial nonvolatile memories (by Dov Frohman at Intel in 1971)
https://ieeexplore.ieee.org/document/4776530/

Aggiunto al nastro di tempo:

Data:

1 gen 1971 anni
Adesso
~ 54 years ago