1 janv. 1971 - Nonvolatile memory
Description:
The unique ability to encase the silicon gate in thermal oxide-one of the best electrical insulators known—allowed also the creation of the first commercial nonvolatile memories (by Dov Frohman at Intel in 1971)https://ieeexplore.ieee.org/document/4776530/
Ajouté au bande de temps:
Date:
1 janv. 1971
Maintenaint
~ Il y a 54 ans